Metal-induced gap states in epitaxial organic-insulator/metal interfaces
Manabu Kiguchi, Ryotaro Arita, Genki Yoshikawa, Yoshiaki Tanida, Susumu Ikeda, Shiro Entani, Ikuyo Nakai, Hiroshi Kondoh, Toshiaki Ohta, Koichiro Saiki, Hideo Aoki
Abstract
We have shown, both experimentally and theoretically, that the metal-induced gap states (MIGS) can exist in epitaxially grown organic insulator/metal interfaces. The experiment is done for alkane/Cu(001) with an element-selective near edge x-ray absorption fine structure (NEXAFS), which exhibits a pre-peak indicative of MIGS. An ab initio electronic structure calculation supports the existence of the MIGS. When the Cu substrate is replaced with Ni, an interface magnetism (spin-polarized organic crystal at the interface) is predicted to be possible with a carrier doping.
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