Spin-Orbit Effects in Diluted Magnetic Semiconductors

Abstract

We present a theoretical study of diluted magnetic semiconductors that treats the local sp-d exchange interaction J between the itinerant carriers and the Mn d electrons within a realistic band structure and goes beyond previous mean-field approaches. In case of (Ga,Mn)As, we find that strong exchange potentials tightly bind carriers near impurity sites. Spin-orbit coupling is found to have a more pronounced effect on spin polarization at weak coupling and this feature can be exploited for magnetotransport. For low doping regime, we predict that spin-orbit coupling splits impurity bands and can induce a novel insulating phase.