Theory of Fano-Kondo effect of transport properties through quantum dots
Isao Maruyama, Naokazu Shibata, Kazuo Ueda
Abstract
The Fano-Kondo effect in zero-bias conductance is investigated based on a theoretical model for the T-shaped quantum dot. The conductance as a function of the gate voltage is generally characterized by a Fano asymmetric parameter q. With varying temperature the conductance shows a crossover between the high and low temperature regions compared with the Kondo temperature TK: two Fano asymmetric peaks at high temperatures and the Fano-Kondo plateau inside a Fano peak at low temperatures. Temperature dependence of conductance is calculated numerically by the Finite temperature density matrix renormalization group method (FT-DMRG).
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