Interface disorder and layer transitions in Ising thin films
L. Bahmad, A. Benyoussef
Abstract
The disorder and layer transitions in the interface between an Ising spin-1/2 film denoted (n), and an Ising spin-1 film denoted (m), are studied using Monte Carlo simulations. The effects of both an external magnetic field, acting only on the spin-1/2 film, and a crystal magnetic field acting only on the spin-1 film, are studied for a fixed temperature and selected values of the coupling constant Jp between the two films. It is found that for large values of the constant Jp, the layers of the film (n), as well as those of the film (m), undergo a first order layering transition. On the other hand, the only disordered layer of the film (n) is that one belonging to the interface films (n)/(m), for any values of the crystal field Δ. We show the existence of a critical value of the crystal field Δc, above which this particular layer of the film (n) is disordered. We found that Δc depends on the values of the constant coupling (Jp) between the two films.
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