Direct measurement of the maximum tunnel rate in a radio frequency single electron transistor operated as a microwave mixer

Abstract

By operating the radio frequency single electron transistor (rf-SET) as a mixer we present measurements in which the RC roll-off of the tunnel junctions is observed at high frequencies. Our technique makes use of the non-linear rf-SET transconductance to mix high frequency gate signals and produce difference-frequency components that fall within the bandwidth of the rf-SET. At gate frequencies >15GHz the induced charge on the rf-SET island is altered on time-scales faster than the inverse tunnel rate, preventing mixer operation. We suggest the possibility of utilizing this technique to sense high frequency signals beyond the usual rf-SET bandwidth.