Two Dimensional Diluted Magnetic Semiconductor Systems
D. J. Priour, E. H. Hwang, S. Das Sarma
Abstract
We develop a theory for two-dimensional diluted magnetic semiconductor systems (e.g. Ga1-xMnxAs layers) where the itinerant carriers mediating the ferromagnetic interaction between the impurity local moments, as well as the local moments themselves, are confined in a two-dimensional layer. The theory includes exact spatial disorder effects associated with the random local moment positions within a disordered RKKY lattice field theory description. We predict the ferromagnetic transition temperature (Tc) as well as the nature of the spontaneous magnetization. The theory includes disorder and finite carrier mean free path effects as well as the important correction arising from the finite temperature RKKY interaction, finding a strong density dependence of Tc in contrast to the simple virtual crystal approximation.
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