Oxygen stoichiometry and instability in aluminium oxide tunnel barrier layers
E. Tan, P. G. Mather, A. C. Perrella, J. C. Read, R. A. Buhrman
Abstract
We present X-ray photoelectron spectroscopy data which show that the chemisorbed oxygen previously observed to be on the surface of thin AlOx layers formed by room temperature thermal oxidation is bound by oxygen vacancies in the oxide. Increasing the electric field across the oxide, either by over-coating with a metallic electrode, or by electron bombardment, drives this surface chemisorbed oxygen into the vacancy sites. Due to the low bonding energies of these oxygen sites, subsequent oxygen exposures draw these ions back to the surface, reforming chemisorbed O2-. Al/AlOx/Al tunnel junctions incorporating electron bombarded AlOx barriers show a significant reduction in the low frequency junction resistance noise level at 4.2 K.
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