Spin accumulation and decay in magnetic Schottky barriers
Gerrit E. W. Bauer, Yaroslav Tserkovnyak, Arne Brataas, Jun Ren, Ke Xia, Maciej Zwierzycki, Paul J. Kelly
Abstract
The theory of charge and spin transport in forward-biased Schottky barriers reveals characteristic and experimentally relevant features. The conductance mismatch is found to enhance the current induced spin-imbalance in the semiconductor. The GaAs|MnAs interface resistance is obtained from an analysis of the magnetic field dependent Kerr rotation experiments by Stephens et al. and compared with first-principles calculations for intrinsic interfaces. With increasing current bias, the interface transparency grows towards the theoretical values, reflecting increasingly efficient Schottky barrier screening.
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