Spin-related magnetoresistance of n-type ZnO:Al and Zn1-xMnxO:Al thin films
Abstract
Effects of spin-orbit coupling and s-d exchange interaction are probed by magnetoresistance measurements carried out down to 50 mK on ZnO and Zn1-xMnxO with x = 3 and 7%. The films were obtained by laser ablation and doped with Al to electron concentration ~1020 cm-3. A quantitative description of the data for ZnO:Al in terms of weak-localization theory makes it possible to determine the coupling constant λso = (4.4 +- 0.4)*10-11 eVcm of the kp hamiltonian for the wurzite structure, Hso = λso*c(s x k). A complex and large magnetoresistance of Zn1-xMnxO:Al is interpreted in terms of the influence of the s-d spin-splitting and magnetic polaron formation on the disorder-modified electron-electron interactions. It is suggested that the proposed model explains the origin of magnetoresistance observed recently in many magnetic oxide systems.
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