Electric field dependence of spin coherence in (001) GaAs/AlGaAs quantum wells
Abstract
Conduction electron spin lifetimes (T1) and spin coherence times (T2) are strongly modified in semiconductor quantum wells by electric fields. Quantitative calculations in GaAs/AlGaAs quantum wells at room temperature show roughly a factor of four enhancement in the spin lifetimes at optimal values of the electric fields. The much smaller enhancement compared to previous calculations is due to overestimates of the zero-field spin lifetime and the importance of nonlinear effects.
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