Photo-excited zero-resistance states in the GaAs/AlGaAs system
Abstract
The microwave-excited high mobility two-dimensional electron system exhibits, at liquid helium temperatures, vanishing resistance in the vicinity of B = [4/(4j+1)] Bf, where Bf = 2πfm*/e, m* is an effective mass, e is the charge, and f is the microwave frequency. Here, we summarize some experimental results.
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