Scaling flow diagram in the fractional quantum Hall regime of GaAs/AlGaAs heterostructures
Abstract
The temperature driven flow lines of the Hall and dissipative magnetoconductance data (σxy,σxx) are studied in the fractional quantum Hall regime for a 2D electron system in GaAs/AlxGa1-xAs heterostructures. The flow lines are rather well described by a recent unified scaling theory developed for both the integer and the fractional quantum Hall effect in a totally spin-polarized 2D electron system which predicts that one (σxy,σxx) point determines a complete flow line.
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