Scaling flow diagram in the fractional quantum Hall regime of GaAs/AlGaAs heterostructures
S. S. Murzin, S. I. Dorozhkin, D. K. Maude, A. G. M. Jansen
Abstract
The temperature driven flow lines of the Hall and dissipative magnetoconductance data (σxy,σxx) are studied in the fractional quantum Hall regime for a 2D electron system in GaAs/AlxGa1-xAs heterostructures. The flow lines are rather well described by a recent unified scaling theory developed for both the integer and the fractional quantum Hall effect in a totally spin-polarized 2D electron system which predicts that one (σxy,σxx) point determines a complete flow line.
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