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Transition from Mott insulator to superconductor in GaNb4Se8 and GaTa4Se8 under high pressure

M. M. Abd-Elmeguid, B. Ni, D. I. Khomskii, R. Pocha, D. Johrendt, X. Wang, K. Syassen

cond-mat.supr-conarXiv:cond-mat/0504284

Abstract

Electronic conduction in GaM4Se8 (M=Nb;Ta) compounds with the fcc GaMo4S8-type structure originates from hopping of localized unpaired electrons (S=1/2) among widely separated tetrahedral M4 metal clusters. We show that under pressure these systems transform from Mott insulators to a metallic and superconducting state with TC=2.9 and 5.8K at 13 and 11.5GPa for GaNb4Se8 and GaTa4Se8, respectively. The occurrence of superconductivity is shown to be connected with a pressure-induced decrease of the MSe6 octahedral distortion and simultaneous softening of the phonon associated with MSe-bonds.

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