Possible Localization Behavior of the Inherent Conducting Polymer (CH3)0.9ReO3
E. --W. Scheidt, R. Miller, Ch. Helbig, G. Eickerling, F. Mayr, R. Herrmann, P. Schwab, W. Scherer
Abstract
Polymeric methyltrioxorhenium (poly-MTO) represents the first example of an inherent conducting organometallic oxide. It adopts the structural motives and transport properties of some classical perovskites in two dimensions. In this study we present resistivity data down to 30 mK which exhibit a crossover from a metallic (dρ/dT > 0) to an insulating (dρ/dT < 0) behavior at about 30 K. Below 30 K an unusual resistivity behavior, similar to that of some doped cuprate systems, is observed: initially the resistivity increases approximately as ρ log(1/T) before it starts to saturate below 2 K. Furthermore, a linear positive magnetoresistance is found (up to 7 T). Temperature dependent magnetization and specific heat measurements in various magnetic fields indicate that the unusual resistivity behavior may be driven by spatial localization of the d1 moments at the Re atoms.
Create a lesson
Related papers
A Gaussian process coarse-grained potential for Na-montmorillonite
Yalda Pedram, Yaoting Zhang, Laurent Brochard et al.
First-principles theory of phonon renormalization from nonlinear electron-phonon interactions
Florian Kluibenschedl, Matthew Houtput, Jacques Tempere et al.
Spin-Lattice Dynamics and Interactions in Magnonic Spinels
Hari Paudyal, Yuri Suzuki, Michael E. Flatté et al.
Magnon-Phonon Dynamics in Multidimensional Antiferromagnetic Oxides
Yogendra Limbu, Michael E. Flatté, Durga Paudyal
Strain-Induced Metal-to-Insulator Transition in Antiferromagnetic SrCrO3 Thin Films
S. Jöhr, A. Carta, J. Moreno et al.
Tuning the Coercive Field in Ferroelectric Hf0.5Zr0.5O2-Al2O3 Heterostructures via Interfacial Charge Dynamics
Marshall B. Frye, Chanyoung Kim, Jeong-Woo Sun et al.