The influence of electrostatic potentials on the apparent s-d exchange energy in III-V diluted magnetic semiconductors
C. Sliwa, T. Dietl
Abstract
The muffin-tin model of an effective-mass electron interacting with magnetic ions in semiconductors is extended to incorporate electrostatic potentials that are present in the case of Mn-based III-V compounds (Ga1-x Mnx N, Ga1-x Mnx As). Since the conduction band electron is repelled from negatively charged magnetic ions and attracted by compensating donors, the apparent value of the s-d exchange coupling N0 α is reduced. It is shown that the magnitude of this effect increases when x diminishes. Our model may explain an unusual behavior of electron spin splitting observed recently in those two materials in the Mn concentration range x <= 0.2%.
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