Interdot Coulomb repulsion effect on the charge transport of parallel double single electron transistors
David M. -T. Kuo, P. W. Li
Abstract
The charge transport behaviors of parallel double single electron transistors (SETs) are investigated by the Anderson model with two impurity levels. The nonequilibrium Keldysh Green's technique is used to calculate the current-voltage characteristics of system. For SETs implemented by quantum dots (QDs) embedded into a thin SiO2 layer, the interdot Coulomb repulsion is more important than the interdot electron hopping as a result of high potential barrier height between QDs and SiO2. We found that the interdot Coulomb repulsion not onlyleads to new resonant levels, but also creates negative differential conductances.
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