Selection and jump rules in electronic Raman scattering from GaAs/AlxGa1-xAs artificial atoms
Alain Delgado, Augusto Gonzalez, D. J. Lockwood, ;
Abstract
A theoretical description of electronic Raman scattering from GaAs/AlxGa1-xAs artificial atoms under the influence of an external magnetic field is presented. Raman spectra with laser excitation energy in the interval Egap-30 meV to Egap are computed in the polarized and depolarized geometry. The polarization ratios for the collective and single-particle excitations indicate a breakdown of the Raman polarization selection rules once the magnetic field is switched on. A Raman intensity jump rule at the band gap is predicted in our calculations. This rule can be a useful tool for identifying the physical nature (charge or spin) of the electronic excitations in quantum dots in low magnetic fields.
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