Local optical field variation in the neighborhood of a semiconductor micrograting

Abstract

The local optical field of a semiconductor micrograting (GaAs, 10x10 micro m) is recorded in the middle field region using an optical scanning probe in collection mode at constant height. The recorded image shows the micro-grating with high contrast and a displaced diffraction image. The finite penetration depth of the light leads to a reduced edge resolution in the direction to the illuminating beam direction while the edge contrast in perpendicular direction remains high (~100nm). We use the discrete dipole model to calculate the local optical field to show how the displacement of the diffraction image increases with increasing distance from the surface.