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Electronic structure and anisotropic transport properties in hexagonal YPtIn and LuAgGe ternary compounds

G. D. Samolyuk, S. L. Bud'ko, E. Morosan, V. P. Antropov, P. C. Canfield

cond-mat.mtrl-sciarXiv:cond-mat/0508346

Abstract

We present anisotropic, zero applied magnetic field, temperature dependent resistivity measurements on hexagonal, non-magnetic, YPtIn and LuAgGe single crystals. For these materials the in-plane resistivity, ρab, is significantly higher than the c - axis one, ρc, with ρab/ρc ≈ 1.4 for YPtIn and ≈ 4.2 - 4.7 for LuAgGe. The connection between the electronic structure and the anisotropic transport properties is discussed using density functional calculations that link the observed anisotropy with a specific shape of Fermi surface and anisotropy of the Fermi velocities.

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