Electronic structure and anisotropic transport properties in hexagonal YPtIn and LuAgGe ternary compounds
G. D. Samolyuk, S. L. Bud'ko, E. Morosan, V. P. Antropov, P. C. Canfield
Abstract
We present anisotropic, zero applied magnetic field, temperature dependent resistivity measurements on hexagonal, non-magnetic, YPtIn and LuAgGe single crystals. For these materials the in-plane resistivity, ρab, is significantly higher than the c - axis one, ρc, with ρab/ρc ≈ 1.4 for YPtIn and ≈ 4.2 - 4.7 for LuAgGe. The connection between the electronic structure and the anisotropic transport properties is discussed using density functional calculations that link the observed anisotropy with a specific shape of Fermi surface and anisotropy of the Fermi velocities.
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