Energy-resolved electron-spin dynamics at surfaces of p-doped GaAs
H. C. Schneider, J. -P. Wuestenberg, O. Andreyev, K. Hiebbner, L. Guo, J. Lange, L. Schreiber, B. Beschoten, M. Bauer, M. Aeschlimann
Abstract
Electron-spin relaxation at different surfaces of p-doped GaAs is investigated by means of spin, time and energy resolved 2-photon photoemission. These results are contrasted with bulk results obtained by time-resolved Faraday rotation measurements as well as calculations of the Bir-Aronov-Pikus spin-flip mechanism. Due to the reduced hole density in the band bending region at the (100) surface the spin-relaxation time increases over two orders of magnitude towards lower energies. At the flat-band (011) surface a constant spin relaxation time in agreement with our measurements and calculations for bulk GaAs is obtained.
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