Angular dependence of direct rf power absorption studies in Bi2Sr2CaCu2O8 single crystals
S. P. Chockalingam, S. Sarangi, S. V. Bhat, K. Oka, Y. Nishihara
Abstract
We have studied rf power dissipation in Bi2Sr2CaCu2O8 single crystals as a function of angle between the applied field and c-axis of the crystal by using a novel technique of measuring direct rf power absorption. We observed two peaks in power absorption as a function of temperature. The amplitude and position of the first peak (peak A) change with orientation and attributed to Josephson junctions decoupling. The second peak (peak B) appears just below Tc has been attributed to the vortex motion and its amplitude depends on the angle of orientation.
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