Coaxial p- and n-type carbon nanotube transistors with dopant-selective coatings
Haibing Peng, Jene A. Golovchenko
Abstract
Carbon nanotube field-effect transistors (FETs) with passivated coaxial gate structures have been fabricated after growth of contacted suspended single wall nanotubes (SWNTs) and subsequent coating with gate dielectrics. Electron Fabry-Perot interferences are observed in the FETs indicating ballistic transport in the coated structures. Reliable production of high-performance SWNT FETs has been obtained by combining patterned growth of SWNT arrays with feed-back controlled electrical breakdown to select desired semiconducting SWNTs, making large-scale SWNT FET fabrication achievable. P-type and n-type passivated SWNT FETs have been realized through dopant-selective nanotube coatings, which enables the fabrication of active circuits based on complementary device structures.
Create a lesson
Related papers
Hall-Density Collapse as Direct Evidence for Percolative Conduction Onset in Monolayer MoS2 Transistors
R. V. Upadya, M. Introna, X. Wu et al.
Spin swapping mediated by spin-orbital textures in centrosymmetric multiorbital materials
Chengyuan Cai, Hanchen Wang, Rui-Chun Xiao et al.
Electrostatics of Chern junctions in a magnetic field
Robin Durand, Pascal Simon, Ion Garate
Spin Simulators based on Exciton-Polariton Waveguide Networks
Kevin Dini, Simone Zanotti, Timothy C. H. Liew
The quantized Hall effect knows which way the current flows: mirror covariance and rectification in a laterally asymmetric Hall bar
A. Siddiki
Floquet-Volkov spin polarization in spin-degenerate Antiferromagnets
Jiyang Fan, Dinghui Wang, Tongshuai Zhu