Line Widths of Single-Electron Tunneling Oscillations: Experiment and Numerical Simulations
Jonas Bylander, Tim Duty, Per Delsing
Abstract
We present experimental and numerical results from a real-time detection of time-correlated single-electron tunneling oscillations in a one-dimensional series array of small tunnel junctions. The electrons tunnel with a frequency f=I/e, where I is the current and e is the electron charge. Experimentally, we have connected a single-electron transistor to the last array island, and in this way measured currents from 5 fA to 1 pA by counting the single electrons. We find that the line width of the oscillation is proportional to the frequency f. The experimental data agrees well with numerical simulations.
Create a lesson
Related papers
Coherent and ultra-low-power EDSR with a flopping-mode spin qubit in germanium
Alexei Orekhov, Wonjin Jang, Pan Zhang et al.
Disorder-induced modulation of the nonlinear Hall effect in Weyl semimetals
Juan A. Cañas, Daniel A. Bonilla, A. Martín-Ruiz
Coplanar Lateral Gating MoS2 on SrTiO3: A Unified Platform for Classical and Quantum Devices
Prasad Muragesh, Manav Murali, Venkatesha Modur Ramachandra et al.
Predictive Structure to Thermal Conductivity Modeling Framework for BEOL Interconnect Stacks in Advanced Technology Nodes Enabled by Extensive Layer Resolved Thermal Measurements
Zifeng Huang, Yiyang Sun, Tianyu Jia et al.
Plasmons in twisted bilayer graphene across dispersive and flat bands
Antonio Palamara, Michele Pisarra, Antonello Sindona
Highly uniform first-electron position in qubit arrays fabricated on dedicated QSOI(R) 300mm commercial platform
Johan Pelloux-Prayer, Elise Prin, Giselle A. Elbaz et al.