Unified description of bulk and interface-enhanced spin pumping

Abstract

The dynamics of non-equilibrium spin accumulation generated in metals or semiconductors by rf magnetic field pumping is treated within a diffusive picture. The dc spin accumulation produced in a uniform system by a rotating applied magnetic field or by a precessing magnetization of a weak ferromagnet is in general given by a (small) fraction of hbar omega, where omega is the rotation or precession frequency. With the addition of a neighboring, field-free region and allowing for the diffusion of spins, the spin accumulation is dramatically enhanced at the interface, saturating at the universal value hbar omega in the limit of long spin relaxation time. This effect can be maximized when the system dimensions are of the order of sqrt(2pi D omega), where D is the diffusion constant. We compare our results to the interface spin pumping theory of A. Brataas et al. [Phys. Rev. B 66, 060404(R) (2002)].