Microwave Nanotube Transistor Operation at High Bias

Abstract

We measure the small signal, 1 GHz source-drain dynamical conductance of a back-gated single-walled carbon nanotube field effect transistor at both low and high dc bias voltages. At all bias voltages, the intrinsic device dynamical conductance at 1 GHz is identical to the low frequency dynamical conductance, consistent with the prediction of a cutoff frequency much higher than 1 GHz. This work represents a significant step towards a full characterization of a nanotube transistor for RF and microwave amplifiers.