Spin-dependent tunneling through a symmetric semiconductor barrier: the Dresselhaus effect
L. G. Wang, Wen Yang, Kai Chang
Abstract
Spin-dependent tunneling through a symmetric semiconductor barrier is studied including the k3 Dresselhaus effect. The spin-dependent transmission of electron can be obtained analytically. By comparing with previous work(Phys. Rev. B 67. R201304 (2003) and Phys. Rev. Lett. 93. 056601 (2004)), it is shown that the spin polarization and interface current are changed significantly by including the off-diagonal elements in the current operator, and can be enhanced considerably by the Dresselhaus effect in the contact regions.
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