Mobility gap in intermediate valent TmSe
M. Dumm, B. Gorshunov, M. Dressel, T. Matsumura
Abstract
The infrared optical conductivity of intermediate valence compound TmSe reveals clear signatures for hybridization of light d- and heavy f-electronic states with m* ~ 1.6 m0 and m* ~ 16 m0, respectively. At moderate and high temperatures, the metal-like character of the heavy carriers dominate the low-frequency response while at low temperatures (TN < T < 100 K) a gap-like feature is observed in the conductivity spectra below 10 meV which is assigned to be a mobility gap due to localization of electrons on local Kondo singlets, rather than a hybridization gap in the density of states.
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