Simulation of Arsenic Diffusion During Rapid Thermal Annealing of Silicon Layers Doped with Low-Energy High-Dose Ion Implantation
Abstract
The model of transient enhanced diffusion of ion-implanted As is formulated and the finite-difference method for numerical solution of the system of equations obtained is developed. The nonuniform distribution of point defects near the interface and more accurate description of arsenic clustering are simultaneously taking into account. Simulation of As diffusion during rapid annealing gives a reasonable agreement with the experimental data. Keywords: diffusion; clusters; ion implantation; arsenic; silicon PACS: 66.30.Jt
Turn this paper into a full lesson
ArcXiv compiles a staged curriculum from this paper: 8-12 lessons across beginner → advanced, synthesised section guides, visuals, flashcards, a quiz, exercises, and on-demand deep dives per section. Grounded in the abstract, never invented.