Charge Imbalance Effects on Interlayer Hopping and Fermi Surfaces in Multilayered High-T_c Cuprates

Abstract

We study doping dependence of interlayer hoppings, t_\perp, in multilayered cuprates with four or more CuO_2 planes in a unit cell. When the double occupancy is forbidden in the plane, an effective amplitude of t_\perp in the Gutzwiller approximation is shown to be proportional to the square root of the product of doping rates in adjacent two planes, i.e., t^eff_\perp \propto t_\perp \sqrt{\delta_1\delta_2}, where \delta_1 and \delta_2 represent the doping rates of the two planes. More than three-layered cuprates have two kinds of \cuo planes, i.e., inner- and outer planes (IP and OP), resulting in two different values of t^eff_{\perp}, i.e., t^eff_\perp 1 \propto t_\perp \sqrt{\delta_IP \delta_IP} between IP's, and t^eff_\perp 2 \propto t_\perp \sqrt{\delta_IP \delta_OP} between IP and OP. Fermi surfaces are calculated in the four-layered t-t'-t''-J model by the mean-field theory. The order parameters, the renormalization factor of t_\perp, and the site-potential making the charge imbalance between IP and OP are self-consistently determined for several doping rates. We show the interlayer splitting of the Fermi surfaces, which may be observed in the angle resolved photoemission spectroscopy measurement.