Radiation-induced oscillatory-magnetoresistance in a tilted magnetic field in GaAs/AlxGa1-xAs devices
Abstract
We examine the microwave-photoexcited magnetoresistance oscillations in a tilted magnetic field in the high mobility two-dimensional electron system. In analogy to the 2D Shubnikov-de Haas effect, the characteristic field, Bf, and the period of the radiation-induced magnetoresistance oscillations appears dependent upon the component of the applied magnetic field that is perpendicular to the plane of the 2DES. In addition, we find that a parallel component, B//, in the range of 0.6 < B// < 1.2 Tesla, at a tilt angle of θ = 800, leaves the oscillatory pattern essentially unchanged.
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