Exchange coupling in semiconductor nanostructures: Validity and limitations of the Heitler-London approach
M. J. Calderon, Belita Koiller, S. Das Sarma
Abstract
The exchange coupling of the spins of two electrons in double well potentials in a semiconductor background is calculated within the Heitler-London (HL) approximation. Atomic and quantum dot types of confining potentials are considered, and a systematic analysis for the source of inaccuracies in the HL approach is presented. For the strongly confining coulombic atomic potentials in the H2 molecule, the most dramatic failure occurs at very large interatomic distances, where HL predicts a triplet ground state, both in 3D and in 2D, coming from the absence of electron-electron correlation effects in this approach. For a 2D double well potential, failures are identified at relatively smaller interdot distances, and may be attributed to the less confining nature of the potential, leading to larger overlap and consequently an inadequate representation of the two-particle states written, within HL, in terms of the ground state orbital at each isolated well. We find that in the double dot case, the range of validity of HL is improved (restricted) in a related 3D (1D) model, and that results always tend to become more reliable as the interdot distance increases. Our calculated exchange coupling is of relevance to the exchange gate quantum computer architectures in semiconductors.
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