Line Broadening and Decoherence of Electron Spins in Phosphorus-Doped Silicon Due to Environmental 29Si Nuclear Spins
Eisuke Abe, Akira Fujimoto, Junichi Isoya, Satoshi Yamasaki, Kohei M. Itoh
Abstract
Phosphorus-doped silicon single crystals with 0.19 % <= f <= 99.2 %, where f is the concentration of 29Si isotopes, are measured at 8 K using a pulsed electron spin resonance technique, thereby the effect of environmental 29Si nuclear spins on the donor electron spin is systematically studied. The linewidth as a function of f shows a good agreement with theoretical analysis. We also report the phase memory time TM of the donor electron spin dependent on both f and the crystal axis relative to the external magnetic field.
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