Quantum transport in the presence of a finite-range time-modulated potential
C. S. Tang, C. S. Chu
Abstract
Quantum transport in a narrow constriction, and in the presence of a finite-range time-modulated potential, is studied. The potential is taken the form V(x,t) = V0 θ(x)θ(a-x)(ωt), with a the range of the potential and x the transmission direction. As the chemical potential μ is increasing, the dc conductance G is found to exhibit dip, or peak, structures when μ is at nω above the threshold energy of a subband. These structures in G are found in both the small a (a λF) and the large a (a λF) regime. The dips, which are associated with the formation of quasi-bound states, are narrower for smaller a, and for smaller V0. The locations of these dips are essentially fixed, with small shifts only in the case of large V0. Our results can be reduced to the limiting case of a delta-profile oscillating potential when both a and V0a are small. The assumed form of the time-modulated potential is expected to be realized in a gate-induced potential configuration.
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