Gamma radiation exposure of MCT diode arrays
Abstract
Investigations of electrical properties of long-wavelength infrared (LWIR) mercury cadmium telluride (MCT) arrays exposed to gamma-radiation have been performed. Resistance-area product characteristics of LWIR n+-p photodiodes have been investigated using microprobe technique at T=78 K before and after an exposure to various doses of gamma-radiation. The current transport mechanisms for those structures are described within the framework of the balance equation model taking into account the occupation of the trap states in the band gap.
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