Magnetic field-assisted manipulation and entanglement of Si spin qubits

Abstract

Architectures of donor-electron based qubits in silicon near an oxide interface are considered theoretically. We find that the precondition for reliable logic and read-out operations, namely the individual identification of each donor-bound electron near the interface, may be accomplished by fine-tuning electric and magnetic fields, both applied perpendicularly to the interface. We argue that such magnetic fields may also be valuable in controlling two-qubit entanglement via donor electron pairs near the interface.