Current-Voltage Characteristics of Long-Channel Nanobundle Thin-Film Transistors: A Bottom-up Perspective
N. V. Pimparkar, S. Kumar, J. Y. Murthy, M. A. Alam
Abstract
By generalizing the classical linear response theory of stick percolation to nonlinear regime, we find that the drain current of a Nanobundle Thin Film Transistor (NB-TFT) is described under a rather general set of conditions by a universal scaling formula ID = A/LS g(LS/LC, rhoS * LS * LS) f(VG, VD), where A is a technology-specific constant, g is function of geometrical factors like stick length (LS), channel length (LC), and stick density (rhoS) and f is a function of drain (VD) and gate (VG) biasing conditions. This scaling formula implies that the measurement of full I-V characteristics of a single NB-TFT is sufficient to predict the performance characteristics of any other transistor with arbitrary geometrical parameters and biasing conditions.
Create a lesson
Related papers
Scalar Spin Chirality from Dissipative Pumping and Lamb Shift Precession
YuanDong Wang, JianHua Wei
Singlet-doublet transitions and Josephson currents in a superconducting ring with a quantum dot
Guo-Hui Ding, Fei Ye, Bing Dong
Switchable Magnetoelectric Transport in Graphene via a Van der Waals Multiferroic
Miuko Tanaka, Shunta Aoki, Ikoi Sato et al.
Universal tuning of Förster resonance energy transfer in gate-programmable conductor-dielectric-conductor heterostructures
Alexis J. Agosto, Daniel Gunlycke, Michael N. Leuenberger
Chiral superconductors and competing states across a Lifshitz transition in rhombohedral pentalayer graphene
Chuanqi Zheng, Cheng Xu, Chushan Li et al.
Spin-textured orbitals in altermagnetic artificial atoms
Yue Mao, Yu-Chen Zhuang, Cheng-Ming Miao et al.