Electric field effect modulation of transition temperature, mobile carrier density and in-plane penetration depth in NdBa2Cu3O(7-delta) thin films
Abstract
We explore the relationship between the critical temperature, Tc, the mobile areal carrier density, n2D, and the zero temperature magnetic in-plane penetration depth, lambdaab(0), in very thin underdoped NdBa2Cu3O7-delta films near the superconductor to insulator transition using the electric field effect technique. We observe that Tc depends linearly on both, n2D and lambdaab(0), the signature of a quantum superconductor to insulator (QSI) transition in two dimensions with znu-bar where z is the dynamic and nu-bar the critical exponent of the in-plane correlation length.
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