Condensation of electron-hole pairs in a degenerate semiconductor at room temperature

Abstract

It has been theoretically shown that in large-density semiconductor plasma there exist an energy level of a bound electron-hole pair (a composite boson) at the band gap. Filling this level up occurs through the condensation of electron-hole pairs with the use of mediating photons of a resonant electromagnetic field. We have demonstrated that in the case of a strong degeneracy of the plasma the critical temperature of the condensation is determined by the Fermi energies of the plasma components rather than the order parameter D. The critical temperature can exceed 300 K at electron-hole densities as large as 6.1018 cm-3. The theoretical model is consistent with available experimental data