Phase study of oscillatory resistances in high mobility GaAs/AlGaAs devices: Indications of a new class of integral quantum Hall effect
R. G. Mani, W. B. Johnson, V. Umansky, V. Narayanamurti, K. Ploog
Abstract
An experimental study of the high mobility GaAs/AlGaAs system at large-ν indicates several distinct phase relations between the oscillatory diagonal- and Hall- resistances, and suggests a new class of integral quantum Hall effect, which is characterized by "anti-phase" Hall- and diagonal- resistance oscillations.
Create a lesson
Related papers
Distinguishing Quantum Capacitance Signatures of a Topological Majorana Wire from a Normal Wire Segment
Binayyak Bhusan Roy, Jay Deep Sau, Sumanta Tewari
Band's Geometry Origin of Quantum Spin Transport Phenomena
Elena Derunova, Mazhar N. Ali
Trapping e/4 quasiparticles in bilayer graphene
Mario Di Luca, Emily Hajigeorgiou, Ning Ma et al.
Scalable, Simple, and Versatile Encapsulation of 2D Materials and Devices
Gabriel Natale, Uma Chirkova, Flávio Henriques Feres et al.
Mobility Enhancement in Si/SiGe Quantum Well Enabled by a Buried Si Layer Trapping Oxygen Impurities
Felix Reichmann, Alberto Mistroni, Fabian Fidorra et al.
Occupation-Driven Josephson Diode in a Symmetric Junction
Jianxiong Zhai, Zelei Zhang, Jiawei Yan