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Resonant Tunneling Magneto Resistance in Coupled Quantum Wells

Christian Ertler, Jaroslav Fabian

cond-mat.mes-hallarXiv:cond-mat/0606531

Abstract

A three barrier resonant tunneling structure in which the two quantum wells are formed by a dilute magnetic semiconductor material (ZnMnSe) with a giant Zeeman splitting of the conduction band is theoretically investigated. Self-consistent numerical simulations of the structure predict giant magnetocurrent in the resonant bias regime as well as significant current spin polarization for a considerable range of applied biases.

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