Planar hole-doping concentration and effective three-dimensional hole-doping concentration for single-layer high-Tc superconductors
Tatsuya Honma, Pei Herng Hor
Abstract
We propose that physical properties for the high temperature superconductors can be addressed by either a two-dimensional planar hole-doping concentration (Ppl) or an effective three-dimentional hole-doping concentration (P3D). We find that superconducting transition temperature (Tc) exhibits a universal dome-shaped behavior in the Tc vs. P3D plot with a universal optimal doping concentration at P3D 1.6 × 1021 cm-3 for the single-layer high temperature superconductors.
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