Probe to properties of MgB2 thick film on silicon carbide substrate

Abstract

We have successfully synthesized MgB2 thick films on 4H-SiC substrate by hybrid physical-chemical deposition (HPCVD). The films have transition temperature TC above 40 K. X-ray diffraction (XRD) shows the c-axis oriented structure of MgB2, with Mg and small MgO impurities. The critical current density JC, estimated using the measured magnetic hysteresis loop and the Bean model, is 6 MA/cm2 in self field at 10 K.