Dependence of Mobility on Density of Gap States in Organics by GAMEaS - Gate Modulated Activation Energy Spectroscopy
W. So, D. V. Lang, V. Y. Butko, X. Chi, J. C. Lashley, A. P. Ramirez
Abstract
We develop a broadly applicable transport-based technique, GAte Modulated activation Energy Spectroscopy (GAMEaS), for determining the density of states (DOS) in the energy gap. GAMEaS is applied to field effect transistors made from different single crystal oligomer semiconductors to extract the free-carrier mobility, u0, from the field effect mobility, ueff. Samples with a lower DOS exhibit higher ueff. Values of u0 up to 100 +/- 40 cm2/Vs at 300K are observed, showing that performance can be greatly enhanced by improving sample purity and crystal quality.
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