29Si Hyperfine Structure of the E'αCenter in Amorphous Silicon Dioxide
G. Buscarino, S. Agnello, F. M. Gelardi
Abstract
We report a study by electron paramagnetic resonance (EPR) on the E'αpoint defect in amorphous silicon dioxide (a-SiO2). Our experiments were performed on gamma-ray irradiated oxygen-deficient materials and pointed out that the 29Si hyperfine structure of the E'alpha consists in a pair of lines split by 49 mT. On the basis of the experimental results a microscopic model is proposed for the E'alpha center, consisting in a hole trapped in an oxygen vacancy with the unpaired electron sp3 orbital pointing away from the vacancy in a back-projected configuration and interacting with an extra oxygen atom of the a-SiO2 matrix.
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