Tuning of the spin-orbit interaction in two-dimensional GaAs holes via strain
B. Habib, J. Shabani, E. P. De Poortere, M. Shayegan, R. Winkler
Abstract
We report direct measurements of the spin-orbit interaction induced spin-splitting in a modulation-doped GaAs two-dimensional hole system as a function of anisotropic, in-plane strain. The change in spin-subband densities reveals a remarkably strong dependence of the spin-splitting on strain, with up to about 20% enhancement of the splitting upon the application of only about 2 x 10-4 strain. The results are in very good agreement with our numerical calculations of the strain-induced spin-splitting.
Create a lesson
Related papers
Chiral phonons driven by chiral cavities
V. A. S. V. Bittencourt, N. Shabala, R. M. Geilhufe et al.
Entanglement from particle number fluctuations in a second-order topological insulator
Mahla Moridi Farimani, Kim Pöyhönen
How Landau caterpillars turn into Hofstadter butterflies by tuning the periodic potential strength
Ivo A. Gabrovski, Louk Rademaker
Device characterization of Si/SiGe double quantum dots using exchange oscillations in Earth's magnetic field
Holly G. Stemp, Harry Hanlim Kang, Chih Hwan Yang et al.
Interfacial Spin-to-Charge Conversion in Sputtered MoTe2 Heterostructures Probed by Spin Pumping and Spin-Torque Ferromagnetic Resonance
J. L. Costa, E. Santos, E. L. T. França et al.
Breakdown of Charge-Conjugation Symmetry of Disclinations in 2D Crystals
Ruslan Yamaletdinov, Mikhail I. Katsnelson, Oleg V. Yazyev