Electronic structure of graphite/6H-SiC interfaces
Abstract
We have studied the electronic structure of the interface between 6H-SiC0001 and graphite. On n-type and p-type 6H-SiC(0001) we observe Schottky barriers of Phib,nSi= 0.3+-0.1eV and Phib,pSi=2.7+-0.1eV, respectively. The observed barrier is face specific: on n-type 6H-SiC(000-1) we find Phib,nC=1.3+-0.1eV. The impact of these barriers on the electrical properties of metal/SiC contacts is discussed.
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