Large inverse tunneling magnetoresistance in Co2Cr0.6Fe0.4Al/MgO/CoFe magnetic tunnel junctions
Abstract
Magnetic tunnel junctions with the layer sequence Co2Cr0.6Fe0.4Al/MgO/CoFe were fabricated by magnetron sputtering at room temperature (RT). The samples exhibit a large inverse tunneling magnetoresistance (TMR) effect of up to -66% at RT. The largest value of -84% at 20 K reflects a rather weak influence of temperature. The dependence on the voltage drop shows an unusual behavior with two almost symmetric peaks at 600 mV with large inverse TMR ratios and small positive values around zero bias.
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