Structural, magnetic, and transport properties of Co2FeSi Heusler films
H. Schneider, Ch. Herbort, G. Jakob, H. Adrian, S. Wurmehl, C. Felser
Abstract
We report the deposition of thin Co2FeSi films by RF magnetron sputtering. Epitaxial (100)-oriented and L21 ordered growth is observed for films grown on MgO(100) substrates. (110)-oriented films on Al2O3(110) show several epitaxial domains in the film plane. Investigation of the magnetic properties reveals a saturation magnetization of 5.0 muB/f.u. at low temperatures. The temperature dependence of the resistivity rhoxx(T) exhibits a crossover from a T3.5 law at T<50K to a T1.65 behaviour at elevated temperatures. rhoxx(H) shows a small anisotropic magnetoresistive effect. A weak dependence of the normal Hall effect on the external magnetic field indicates the compensation of electron and hole like contributions at the Fermi surface.
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