Structural, magnetic, and transport properties of Co2FeSi Heusler films
Abstract
We report the deposition of thin Co2FeSi films by RF magnetron sputtering. Epitaxial (100)-oriented and L21 ordered growth is observed for films grown on MgO(100) substrates. (110)-oriented films on Al2O3(110) show several epitaxial domains in the film plane. Investigation of the magnetic properties reveals a saturation magnetization of 5.0 muB/f.u. at low temperatures. The temperature dependence of the resistivity rhoxx(T) exhibits a crossover from a T3.5 law at T<50K to a T1.65 behaviour at elevated temperatures. rhoxx(H) shows a small anisotropic magnetoresistive effect. A weak dependence of the normal Hall effect on the external magnetic field indicates the compensation of electron and hole like contributions at the Fermi surface.
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