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Local correlations and hole doping in NiO: a dynamical mean field study

J. Kunes, V. I. Anisimov, A. V. Lukoyanov, D. Vollhardt

cond-mat.str-elarXiv:cond-mat/0612116

Abstract

Using a combination of ab initio bandstructure methods and dynamical mean-field theory we study the single-particle spectrum of the prototypical charge-transfer insulator NiO. Good agreement with photoemission and inverse-photoemission spectra is obtained for both stoichiometric and hole-doped systems. In spite of a large Ni-d spectral weight at the top of the valence band the doped holes are found to occupy mainly the ligand p orbitals. Moreover, high hole doping leads to a significant reconstruction of the single-particle spectrum accompanied by a filling of the correlation gap.

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