Sum Rules for the Optical and Hall Conductivity in Graphene
V. P. Gusynin, S. G. Sharapov, J. P. Carbotte
Abstract
Graphene has two atoms per unit cell with quasiparticles exhibiting the Dirac-like behavior. These properties lead to interband in addition to intraband optical transitions and modify the f-sum rule on the longitudinal conductivity. The expected dependence of the corresponding spectral weight on the applied gate voltage Vg in a field effect graphene transistor is const- |Vg|3/2. For Vg =0, its temperature dependence is T3 rather than the usual T2. For the Hall conductivity, the corresponding spectral weight is determined by the Hall frequency ωH which is linear in the carrier imbalance density ρ, and hence proportional to Vg, and is different from the cyclotron frequency for Dirac quasiparticles.
Create a lesson
Related papers
Coherent and ultra-low-power EDSR with a flopping-mode spin qubit in germanium
Alexei Orekhov, Wonjin Jang, Pan Zhang et al.
Disorder-induced modulation of the nonlinear Hall effect in Weyl semimetals
Juan A. Cañas, Daniel A. Bonilla, A. Martín-Ruiz
Coplanar Lateral Gating MoS2 on SrTiO3: A Unified Platform for Classical and Quantum Devices
Prasad Muragesh, Manav Murali, Venkatesha Modur Ramachandra et al.
Predictive Structure to Thermal Conductivity Modeling Framework for BEOL Interconnect Stacks in Advanced Technology Nodes Enabled by Extensive Layer Resolved Thermal Measurements
Zifeng Huang, Yiyang Sun, Tianyu Jia et al.
Plasmons in twisted bilayer graphene across dispersive and flat bands
Antonio Palamara, Michele Pisarra, Antonello Sindona
Highly uniform first-electron position in qubit arrays fabricated on dedicated QSOI(R) 300mm commercial platform
Johan Pelloux-Prayer, Elise Prin, Giselle A. Elbaz et al.